Opportunity at National Institute of Standards and Technology (NIST)

Block Copolymer Lithography

Location

Material Measurement Laboratory, Materials Science and Engineering Division

RO# Location
50.64.21.B7654 Gaithersburg, MD

Please note: This Agency only participates in the February and August reviews.

Advisers
name email phone
Kline, R Joseph joe.kline@nist.gov 301.975.4356
Description

Conventional optical-based photolithography is reaching the limits of scaling for the patterning and fabrication of nanoscale devices. The semiconductor industry requires increased patterning resolution to continue shrink device dimensions and follow Moore’s law. Block copolymer lithography provides a potential avenue for increasing the resolution of current photolithography methods. The self-assembly of the block copolymer is directed by a template patterned by conventional lithographic methods. The block copolymer structure within the pattern template can amplify the resolution of the original pattern. Lamellae forming block copolymers can reduce the size of line patterns, while cylinder forming block copolymers can be used for fabrication of bit-patterned media for next generation magnetic data storage. Research projects will include using X ray and neutron scattering to characterize the fidelity of the block copolymer structure to the template and computer simulations of the underlying polymer physics that direct the self-assembly.

Keywords:

Block copolymer; Nanolithography; Photolithography; X-ray scattering; Neutron scattering; Polymer physics;

Eligibility

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants

Stipend
Base Stipend Travel Allotment Supplementation
$74,950.00 $3,000.00