Opportunity at National Institute of Standards and Technology (NIST)

Functionalizing Semiconductor Surfaces

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

RO# Location
50.68.03.B6418 Gaithersburg, MD 20899

Please note: This Agency only participates in the February and August reviews.

Advisers
name email phone
Hacker, Christina Ann christina.hacker@nist.gov 301.975.2233
Description

Combining organic monolayers with semiconductor surfaces is of interest for many differing applications including molecular electronics, sensors, and bio-electronics. Monolayers on semiconductor surfaces take advantage of the increased electrical functionality, chemical and structural robustness, wealth of fabrication knowledge, and present a less disruptive technology compared with monolayers on typically used metal substrates. We are investigating various experimental approaches to form organic monolayers on semiconductor surfaces. The resulting films are characterized by using Fourier-transform infrared spectroscopy, spectroscopic ellipsometry, contact angle measurements, and atomic force microscopy. Key aspects of this work involve examination and optimization of alternative functionalization pathways for monolayer formation and thorough characterization of the resulting monolayer. More advanced applications include formation and characterization of electronic devices, incorporation of electrically active nanoparticles, and monolayers specifically tailored to bind differing biological moieties.

Keywords:

Atomic force microscopy; Bio electronics; Infrared spectroscopy; Molecular electronics; Nanotechnology; Self-assembled monolayer; Semiconductor; Sensor; Silicon;

Eligibility

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants

Stipend
Base Stipend Travel Allotment Supplementation
$74,950.00 $3,000.00