Opportunity at National Institute of Standards and Technology (NIST)

Femtosecond Time-Resolved Measurements in Semiconductor Materials

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

RO# Location
50.68.03.B8456 Gaithersburg, MD 20899

Please note: This Agency only participates in the February and August reviews.

Advisers
name email phone
Heilweil, Edwin J. edwin.heilweil@nist.gov 301.975.2370
Hight Walker, Angela angela.hightwalker@nist.gov 301.975.2155
Description

Dynamics in semiconductor materials will be studied using optical pump-probe methods. Rapid changes in optical properties of materials are measured using supercontinuum spectral interferometry and other techniques. Coherent control techniques for all-optical injection of charge and spin currents, coupled with spatially-resolved pump-probe measurements, will be used to study carrier transport. Changes in linear and nonlinear optical susceptibilities in an applied DC or THz electric field are also of interest, including the Franz-Keldysh effect. Materials of interest include layered semiconductors and novel 2D materials. Research is done in close collaboration with other groups at NIST with expertise in complementary techniques and materials growth.

Keywords:

Time-resolved spectroscopy; Ultrashort pulses; Nonlinear optics; Coherent control; Electro-optics; Ultrafast spectroscopy;

Eligibility

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants

Stipend
Base Stipend Travel Allotment Supplementation
$74,950.00 $3,000.00